Higher Power Transistor Driver Applications Using the transistor is same as any other general purpose MOSFET is used. IRF9540 can be used in high speed switching purposes, other than that it can also be used in general purposes switching and amplification purposes. Moreover IRF9540 can also be used as a separate audio amplifier or it can also be used in high power audio amplifier stages. It can also drive load of upto 56A in pulse mode. It also has low gate driving capability due to which the user can operate it directly from the output of ICs or microcontrollers. On the other hand the low drain to source resistance reduces power loss and makes the transistor power efficient. The high switching speed of the transistor can be useful in applications where the designer requires to switch the system or load in nano seconds so the derived circuit will face no disconnection. The transistor possesses high switching speed and low drain to source resistance. The transistor is capable to drive max load of -19A with the load voltage of -100V and the max load in pulse mode can be upto -76A. IRF9540 is a P channel MOSFET transistor that can be used for switching and amplification purposes. Max Storage & Operating temperature Should Be: -55 to +175 CentigradeĢSJ380, 2SJ464, 2SJ412, IRF9540PBF, SIHF9540.Drain to Source Resistance in ON State: 200 Ohms.Max Gate to Source Voltage Should Be: ± 20V.Max Voltage Applied From Drain to Source: -100V.Package Type: TO-220, TO-220AB And Other Packages.To Download the datasheet just copy and paste the below link in your browser. The operating junction temperature should be under -50 ☌ to +100☌ and the storage temperature should be under -55☌ to +150☌. The maximum DC forward anode current is 150mA therefore it should not exceed from 120mA. The gate to cathode reverse voltage is 40V therefore it should be under 32V. The maximum gate to cathode forward voltage is 40V therefor it should be under 32V. To safely operate this transistor use it 20% below from its maximum ratings. Safe Operating Guidelines / Absolute Maximum Ratings: These two resistors set the voltage at the gate of the transistor and that’s how we program this transistor. We have to make a voltage divider with two resistors. This transistor is used with voltage divider technique. Using this transistor is different from the normal BJT, UJT and FETs. The applications in which this transistor can be used are timings circuits, pulse circuits, oscillator circuits, thyristor-trigger circuits etc.Īs mentioned 2N6027 transistor can be used in applications such as timings circuits, pulse circuits, oscillator circuits, thyristor-trigger circuit but it is not limited to these uses and can be used for other applications too. The PUT also has four layers like an SCR but it cannot drive high current load like an SCR because it is built to trigger low current loads so with the loads limit of PUT transistor you can drive loads of upto 50mA. When you look at the internal diagram of the transistor you will see it mostly looks like an SCR and also works like an SCR by blocking the current until the triggered ON, once it is triggered it will come in the latch state in condition of high current and remains in the latch state as long as the current gets under the latching limit current. In other words we can explain it that it is a unijunction transistor which provides more control as compare to the normal unijunction transistor because it can be controlled or programmed with two external resistors. It is similar to a unijunction transistor but the difference is that it can be programmed with two external resistors which can be connected to its gate to control its output. But don’t confuse with the word programmable, because that doesn’t mean it has any kind of microcontroller that you can program. Max Storage, Operating & Junction temperature range: -55 to +150 CentigradeĢN6027 Transistor Explained / Description:ĢN6027 is a programmable unijunction transistor or PUT available in TO-92 transistor package.Anode to Cathode Voltage(1) (VAK): ±40V.Gate to Cathode Reverse Voltage (VGKR): -5.0.Gate to Anode Reverse Voltage (VGAR): 40V.Gate to Cathode Forward Voltage (VGKF): 40V.Max Power Dissipation (PF): 300 Miliwatt.Max DC Forward Anode Current (IT): 150mA.Transistor Type: PUT (Programmable Unijunction Transistor).
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